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bzt52c?w silicon planar zener diodes features ? ideally suited for autom ated assembly processes ? total power dissipation: max. 500 mw absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 storage temperature range t stg - 65 to + 150 characteristics at t a = 25 parameter symbol max. unit thermal resistance junction to ambient air r tha 340 /w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-123 and symbol 1 2 pinning 1 pin cathode description 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at ta = 25 type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom v zt at i zt z zt at i zt z zk at i zk i r at v r v v ma max. ( ? )ma max. ( ? ) ma max. ( a) v bzt52c2v4w mh 2.4 2.2...2.6 5 100 5 600 1 50 1 bzt52c2v7w mj 2.7 2.5...2.9 5 100 5 600 1 20 1 bzt52c3v0w mk 3.0 2.8...3.2 5 95 5 600 1 10 1 bzt52c3v3w mm 3.3 3.1...3.5 5 95 5 600 1 5 1 bzt52c3v6w mn 3.6 3.4...3.8 5 90 5 600 1 5 1 bzt52c3v9w mp 3.9 3.7...4.1 5 90 5 600 1 3 1 bzt52c4v3w mr 4.3 4...4.6 5 90 5 600 1 3 1 bzt52c4v7w mx 4.7 4.4...5 5 80 5 500 1 3 2 bzt52c5v1w my 5.1 4.8...5.4 5 60 5 480 1 2 2 bzt52c5v6w mz 5.6 5. 2...6 5 40 5 400 1 1 2 bzt52c6v2w na 6.2 5.8...6.6 5 10 5 150 1 3 4 bzt52c6v8w nb 6.8 6.4...7.2 5 15 5 80 1 2 4 bzt52c7v5w nc 7.5 7...7.9 5 15 5 80 1 1 5 bzt52c8v2w nd 8.2 7.7 ...8.7 5 15 5 80 1 0.7 5 bzt52c9v1w ne 9.1 8.5 ...9.6 5 15 5 100 1 0.5 6 bzt52c10w nf 10 9.4...10.6 5 20 5 150 1 0.2 7 bzt52c11w nh 11 10.4...11.6 5 20 5 150 1 0.1 8 bzt52c12w nj 12 11.4...12.7 5 25 5 150 1 0.1 8 bzt52c13w nk 13 12.4...14.1 5 30 5 170 1 0.1 8 bzt52c15w nm 15 13.8... 15.6 5 30 5 200 1 0.1 10.5 bzt52c16w nn 16 15.3...17.1 5 40 5 200 1 0.1 11.2 bzt52c18w np 18 16.8... 19.1 5 45 5 225 1 0.1 12.6 bzt52c20w nr 20 18.8...21.2 5 55 5 225 1 0.1 14 bzt52c22w nx 22 20.8... 23.3 5 55 5 250 1 0.1 15.4 bzt52c24w ny 24 22.8... 25.6 5 70 5 250 1 0.1 16.8 bzt52c27w nz 27 25.1...28. 9 2 80 2 300 0.5 0.1 18.9 bzt52c30w pa 30 28...32 2 80 2 300 0.5 0.1 21 bzt52c33w pb 33 31...35 2 80 2 325 0.5 0.1 23.1 bzt52c36w pc 36 34...38 2 90 2 350 0.5 0.1 25.2 bzt52c39w pd 39 37...41 2 130 2 350 0.5 0.1 27.3 bzt52c43w 6a 43 40...46 2.5 130 2 500 1 2 33 bzt52c47w 6b 47 44...50 2.5 150 2 500 1 2 36 bzt52c51w 6c 51 48...54 2.5 180 2 500 1 1 39 BZT52C56W 6d 56 52...60 2.5 180 2 500 1 1 43 bzt52c62w 6e 62 58...66 2.5 200 2 500 1 0.2 47 bzt52c68w 6f 68 64...72 2.5 250 2 500 1 0.2 52 bzt52c75w 6h 75 70...79 2.5 300 2 500 1 0.2 57 1) v zt is tested with pulses (20 ms). bzt52c?w silicon planar zener diodes 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
iz 0 0 10 20 vz 30 40 v 8 ma test current iz 5ma 10 20 30 0 breakdown characteristics t j = constant (pulsed) 01 23 test current iz 5ma 10 20 45 7 6 vz tj=25 c o 10 9 v iz 30 40 breakdown characteristics t j = constant (pulsed) tj=25 c 50 ma o 2v7 3v3 3v9 4v7 5v6 6v8 8v2 10 12 15 18 22 27 33 ambient temperature: ta ( c) o 0 25 100 150 0 200 400 600 power dissipation: ptot (mw) power dissipation vs ambient temperature 50 75 125 500 300 100 bzt52c?w silicon planar zener diodes 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
package outline plastic surface mounted package; 2 leads sod-123 e mm unit a b c dehv all round d b c a a h h e p p e 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 o 5 bzt52c?w silicon planar zener diodes 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech

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